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5N120BND Power MOSFET Cell holder These are Carbon Film Resistor

SKU: 83200084192

4.3
USD173.00 USD221.00

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Ships within 48 hours · Estimated delivery Aug 23 - Aug 28

Description

These are Carbon Film Resistor with a value of 100k ohm 1/8W and tolerance of ±5%

0 mV max for four comparators

6W Capacitance 450pF AC Vrms 320V DC Voltage 410V Mounting Type Through Hole

2 inch/48mm

5N120BND Power MOSFET Cell holder These are Carbon Film ResistorIGBT designs that do not require a punch through are the HGTG5N120BND and HGTP5N120BND. They are brand new IGBTs that are MOS gated for high voltage switching. IGBTs combine the greatest elements of bipolar transistors and MOSFETs. This device combines the low on state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. The IGBT in use is a TA49308 development type. The TA49058 development type diode is utilized (Part

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