Micron Technology DRAM SDRAMMobile-, Part #: MT44K64M18RB-107E:A | Dynamic random access memory | DEX Renewable Spare Parts Bluetooth 4

Bluetooth 4

Intel Dual Part #ISL3177EIUZ

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5 MB on-chip Code Flash with ECC – 64 KB on-chip Data Flash with ECC – Up to 96 KB on-chip SRAM with ECC – 8-entry MPU  Interrupts – 16 priority levels – Non-maskable interrupt (NMI) – Up to 51 external interrupts lines including 27 wake-up lines  16-channel eDMA (linked to PITs

Micron Technology DRAM SDRAMMobile-, Part #: MT44K64M18RB-107E:A | Dynamic random access memory | DEX Renewable Spare Parts Bluetooth 4Micron Technology DRAM , Part #: MT44K64M18RB 107E: A features: 1200 MHz DDR operation (2400 Mb s ball data rate) 86. 4Gb s peak bandwidth (x36 at 1200 MHz clock frequency) Organization 64 Meg x 18, and 32 Meg x 36 common I O (CIO) 16 banks 1. 2V center terminated push pull I O 2. 5V VEXT, 1. 35V VDD, 1. 2V VDDQ (optional 1. 35V VDDQ for 2400 operation only). Reduced cycle time (t RC (MIN) = 6. 67 8ns) SDR addressing Programmable READ WRITE latency