Micron Technology DRAM SDRAMMobile-, Part #: MT44K32M36RB-093E:A | Dynamic random access memory | DEX TDK 1V TO 20V SYNCHRONOUS STEP

1V TO 20V SYNCHRONOUS STEP DOWN DUAL-OUT 0

Form Factor 3

maximum (E-Temp

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Micron Technology DRAM SDRAMMobile-, Part #: MT44K32M36RB-093E:A | Dynamic random access memory | DEX TDK 1V TO 20V SYNCHRONOUS STEPMicron Technology DRAM , Part #: MT44K32M36RB 093E: A features: 1200 MHz DDR operation (2400 Mb s ball data rate) 86. 4Gb s peak bandwidth (x36 at 1200 MHz clock frequency) Organization 64 Meg x 18, and 32 Meg x 36 common I O (CIO) 16 banks 1. 2V center terminated push pull I O 2. 5V VEXT, 1. 35V VDD, 1. 2V VDDQ (optional 1. 35V VDDQ for 2400 operation only). Reduced cycle time (t RC (MIN) = 6. 67 8ns) SDR addressing Programmable READ WRITE latency